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| SLD302XT 200mW High Power Laser Diode Description The SLD302XT allows independent thermal and electric design. This laser diode has a built-in TE (Thermo Electric) cooler. Features * High power Recommended optical power output Po = 180mW * Low operating current * Flat Package with built-in photodiode, TE cooler and thermistor Applications * Solid state laser excitation * Medical use Structure AlGaAs double-hetero-type laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 180mW, Tth = 25C Absolute Maximum Ratings (Tth = 25C) * Optical power output Po * Reverse voltage VR LD PD * Operating temperature Topr * Storage temperature Tstg Equivalent Circuit TE Cooler N P TH LD PD 1 2 3 4 5 6 7 8 Pin Configuration (Top View) No. 1 2 3 4 5 6 200 2 15 -10 to +50 -40 to +85 mW V V C C 7 8 Function TE cooler (negative) Thermistor lead 1 Thermistor lead 2 Laser diode (anode) Laser diode (cathode) Photodiode (cathode) Photodiode (anode) TE cooler (positive) Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E88062C02-PS SLD302XT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Monitor current Perpendicular Radiation angle Parallel Position Positional accuracy Differential efficiency Thermistor resistance Angle Symbol Ith Iop Vop p Imon // X, Y D Rth PO = 180mW PO = 180mW PO = 180mW PO = 180mW VR = 10V PO = 180mW Conditions (Tth: Thermistor temperature, Tth = 25C) Min. Typ. 150 350 1.9 770 0.3 28 12 PO = 180mW PO = 180mW Tth = 25C 0.65 0.9 10 40 17 100 3 Max. 200 500 3.0 840 Unit mA mA V nm mA degree degree m degree mW/mA k Wavelength Selection Classification Type SLD302XT-1 SLD302XT-2 SLD302XT-3 Type SLD302XT-21 SLD302XT-24 SLD302XT-25 Wavelength (nm) 785 15 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1mW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device -2- SLD302XT Example of Representative Characteristics Optical power output vs. Forward current characteristics 200 Tth = -10C Po - Optical power output [mW] 200 Tth = -10C Po - Optical power output [mW] Tth = 0C Tth = 25C Optical power output vs. Monitor current characteristics Tth = 0C Tth = 50C Tth = 25C 100 Tth = 50C 100 0 0 0 0.1 Imon - Monitor current [mA] 0.2 0 250 IF - Forward current [mA] 500 Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (parallel to junction) Tth = 25C Radiation intensity (optional scale) Ith - Threshold current [mA] 500 PO = 180mW PO = 90mW PO = 30mW 100 -10 0 10 20 30 Tth - Thermistor temperature [C] 40 50 -30 -20 -10 0 10 Angle [degree] 20 30 Power depecdence of near field pattern Tth = 25C Radiation intensity (optional scale) p - Oscillation wavelength [nm] Oscillation wavelength vs. Temperature characteristics 830 PO = 180mW 820 810 PO = 180mW PO = 150mW PO = 100mW PO = 75mW PO = 50mW PO = 25mW 800 790 50m 780 -10 0 10 20 30 40 50 Tth - Thermistor temperature [C] -3- SLD302XT Differential efficiency vs. Temperature characteristics 1.5 80 Power dependence of polarization ratio Tth = 25C D - Differential efficiency [mW/mA] 60 Polarization ratio -10 0 10 20 30 40 50 1.0 40 0.5 20 0 0 0 50 100 150 200 250 Tth - Thermistor temperature [C] Po - Optical power output [mW] -4- SLD302XT Power dependence of wavelength Tth = 25C Po = 40mW Relative radiant intensity Relative radiant intensity Tth = 25C Po = 80mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tth = 25C Po = 120mW Relative radiant intensity Relative radiant intensity Tth = 25C Po = 160mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tth = 25C Po = 200mW Relative radiant intensity 800 805 Wavelength [nm] 810 -5- SLD302XT Temperature dependence of wavelength (Po = 180mW) Tth = -6C Tth = 12C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tth = 23C Tth = 35C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tth = 45C Relative radiant intensity 805 815 Wavelength [nm] 825 -6- SLD302XT TE cooler characteristics TE cooler characteristics 1 10 Tc = 33C IT = 2.5A TE cooler characteristics 2 10 Tth = 25C Q - Absorbed heat [W] Q - Absorbed heat [W] T vs V IT = 2.5A VT - Pin voltage [V] 2.0A 5 4 1.5A 3 1.0A 2 2.0A 2. 5A T vs V 5 5 1.5A 5 4 3 2 1 0 1.0A 0.5A 0. 5A 1. 0A 1. 5A 1 0 0 0 0 50 100 0 vs 2.0A 1. 0.5A Q 0A 2. 0. 5A 5A 1.5A 50 T 100 T - Temperature difference [C] T : Tc - Tth Tth : Thermistor temperature Tc : Case temperature T - Temperature difference [C] Thermistor characteristics 50 Rth - Thermistor resistance [k] 10 5 1 -10 0 10 20 30 40 50 60 70 Tth - Thermistor temperature [C] -7- VT - Pin voltage [V] 2.0A T vs Q SLD302XT Package Outline Unit: mm M - 273(LO - 10) + 0.05 4 - O3.0 0 33.0 0.05 14.0 O5.0 Window Glass 15.0 0.05 * 7.5 0.1 4 - R1.2 0.3 8 - O0.6 2.54 38.0 0.5 0.65MAX LD Chip 19.0 28.0 0.5 + 2.0 8.0 - 1.0 Reference Plane 28.0 0.5 7.5 0.2 11.35 0.1 10.4 *16.5 0.1 *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE EIAJ CODE JEDEC CODE M-273(LO-10) PACKAGE WEIGHT 43g -8- 3.0 Sony Corporation |
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